VolatileDRAM1.25 GHz1.21V ~ 1.29V-LPDDR3[Parameters, quotations, pictures, datasheet]-ICQQG

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LPDDR3

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MT61M256M32JE-10 AAT:A

Store: ShenZhen/Hongkong

Description：IC RAM 8GBIT PARALLEL 180FBGA

Brand

Samsung

Micron

Hynix

nanya

ELPIDA

Memory format

DRAM

Installation type

Surface mount

packing

pallet

Part status

On sale

Memory type

Volatile

storage capacity

8Gb(256M x 32)

Voltage - Supply

1.21V ~ 1.29V

working temperature

-40°C ~ 105°C

Clock frequency

1.25 GHz

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